Numerical Analysis of the ZnGeN2 Layer Effect on InGaN/GaN Multiple Quantum Well Light-Emitting Diodes.

Autor: Samira, Laznek1 samira.laznek@univ-biskra.dz, Nadia, Messei2, Attaf, Abdallah2
Zdroj: International Journal of Nanoelectronics & Materials. Jan2024, Vol. 17 Issue 1, p12-19. 8p.
Databáze: Academic Search Ultimate