The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers.

Autor: Sun, L.1 (AUTHOR) ijie.sun-3@postgrad.manchester.ac.uk, Kruszewski, P.2 (AUTHOR), Markevich, V. P.1 (AUTHOR), Dawe, C. A.1 (AUTHOR), Peaker, A. R.1 (AUTHOR), Crowe, I. F.1 (AUTHOR), Plesiewicz, J.2 (AUTHOR), Prystawko, P.2 (AUTHOR), Grzanka, Sz.2 (AUTHOR), Grzanka, E.2 (AUTHOR), Jakiela, R.3 (AUTHOR), Binks, D.1 (AUTHOR), Halsall, M. P.1 (AUTHOR)
Zdroj: Journal of Applied Physics. 5/7/2024, Vol. 135 Issue 17, p1-7. 7p.
Databáze: Academic Search Ultimate