Room-temperature, RF-activated, quantum effects via engineered defect sites in thin-film AlN, Al2O3, and SnOx.
| Autor: | Anwar, Farhana1 (AUTHOR), Coutu Jr., Ronald A.1 (AUTHOR) ronald.coutu@marquette.edu, Mahbub, Rafee1 (AUTHOR) |
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| Zdroj: | AIP Advances. Mar2024, Vol. 14 Issue 3, p1-9. 9p. |
| Databáze: | Academic Search Ultimate |
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