Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing.
| Autor: | Li, Haoxin1 (AUTHOR), Han, Zhao1 (AUTHOR), Zhou, Xuanze1 (AUTHOR), Xu, Guangwei1 (AUTHOR) zhouxz@ustc.edu.cn, Long, Shibing1 (AUTHOR) |
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| Zdroj: | Journal of Applied Physics. 3/21/2024, Vol. 135 Issue 11, p1-7. 7p. |
| Databáze: | Academic Search Ultimate |
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