Molecular dynamics simulations of displacement damage in SiGe alloys induced by single and binary primary knock-on atoms under different temperatures.

Autor: Xing, Tian1 (AUTHOR), Liu, Shuhuan1 (AUTHOR) shuhuanliu@126.com, Wang, Xuan1 (AUTHOR) wxuan@xjtu.edu.cn, Adekoya, Mathew Adefusika1 (AUTHOR), Wang, Chao1 (AUTHOR), Li, Haodi1 (AUTHOR), Meng, Fanjun1 (AUTHOR), Du, Xiaozhi1 (AUTHOR), Sun, Yunfeng1 (AUTHOR), Zhu, Shijie1 (AUTHOR), Chen, Wei2 (AUTHOR), Li, Kang3 (AUTHOR), Zheng, Xiaohai3 (AUTHOR)
Zdroj: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Nov/Dec2023, Vol. 178 Issue 11/12, p1384-1403. 20p.
Databáze: Academic Search Ultimate
Externí odkaz:
Nepřihlášeným uživatelům se plný text nezobrazuje