Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films.

Autor: Zhan, Jiali1,2 (AUTHOR), Wu, Ying1 (AUTHOR) ywu2023@nju.edu.cn, Zeng, Xiaohong1 (AUTHOR), Feng, Boyuan3 (AUTHOR), He, Minghao2 (AUTHOR), He, Gaohang3 (AUTHOR) Gaohang.He@imec.be, Ding, Sunan1 (AUTHOR) dingsunan@nju.edu.cn
Zdroj: Journal of Applied Physics. 3/14/2024, Vol. 135 Issue 10, p1-7. 7p.
Databáze: Academic Search Ultimate