Driven electron g-factor anisotropy in layered III–V semiconductors: Interfacing, tunnel coupling, and structure inversion asymmetry effects.
| Autor: | Toloza Sandoval, M. A.1,2,3 (AUTHOR) marcelo.sandoval@lnnano.cnpem.br, Leon Padilla, J. E.3 (AUTHOR), Wanderley, A. B.4 (AUTHOR), Sipahi, G. M.4 (AUTHOR), Diniz Chubaci, J. F.5 (AUTHOR), Ferreira da Silva, A.3,5,6 (AUTHOR) |
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| Zdroj: | Journal of Applied Physics. 3/14/2024, Vol. 135 Issue 10, p1-9. 9p. |
| Databáze: | Academic Search Ultimate |
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