O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery.

Autor:	Nunomura, Shota1,2 (AUTHOR) s.nunomura@aist.go.jp, Tsutsumi, Takayoshi3 (AUTHOR), Sakata, Isao1 (AUTHOR), Hori, Masaru3 (AUTHOR)
Zdroj:	Journal of Applied Physics. 2/7/2024, Vol. 135 Issue 5, p1-9. 9p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu