Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers.

Autor:	Kudryavtsev, K. E.1 (AUTHOR) konstantin@ipmras.ru, Andreev, B. A.1 (AUTHOR), Lobanov, D. N.1 (AUTHOR), Kalinnikov, M. A.1 (AUTHOR), Yablonskiy, A. N.1 (AUTHOR), Yunin, P. A.1 (AUTHOR), Novikov, A. V.1 (AUTHOR), Krasilnik, Z. F.1 (AUTHOR)
Zdroj:	Journal of Applied Physics. 12/7/2023, Vol. 134 Issue 21, p1-8. 8p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu