Research Progress on Surface/Subsurface Damages of 4H Silicon Carbide Wafers.

Autor: LI Guofeng1,2, CHEN Hongyu1, HANG Wei1, HAN Xuefeng2,3, YUAN Julong1 jlyuan@zjut.edu.cn, PI Xiaodong2,3 xdpi@zju.edu.cn, YANG Deren2,3, WANG Rong2,3 rong_wang@zju.edu.cn
Zdroj: Journal of Synthetic Crystals. Nov2023, Vol. 52 Issue 11, p1907-1921. 15p.
Databáze: Academic Search Ultimate