Kinetics of Defect Formation in ZnO Subjected to a Flux of Oxygen Radicals.

Autor: Kotlyarevsky, M. B.1, Rogozin, I. V.2 rogozin@bdpu.org, Marakhovskiı, A. V.2
Zdroj: Semiconductors. Jun2005, Vol. 39 Issue 6, p609-614. 6p.
Databáze: Academic Search Ultimate