Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator.
| Autor: | Zhdan, A. G.1, Goldman, E. I.1, Gulyaev, Yu. V.1, Chucheva, G. V.1 gvc@ms.ire.rssi.ru |
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| Zdroj: | Semiconductors. Jun2005, Vol. 39 Issue 6, p666-673. 8p. |
| Databáze: | Academic Search Ultimate |
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