Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature.
| Autor: | Guise, J.1 (AUTHOR) julien.guise@umontpellier.fr, Ratovo, H.1 (AUTHOR), Thual, M.2 (AUTHOR), Fehlen, P.1,3 (AUTHOR), Gonzalez-Posada Flores, F.1 (AUTHOR), Rodriguez, J.-B.1 (AUTHOR), Cerutti, L.1 (AUTHOR), Centeno, E.4 (AUTHOR), Blin, S.1 (AUTHOR), Taliercio, T.1 (AUTHOR) |
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| Zdroj: | Journal of Applied Physics. 10/28/2023, Vol. 134 Issue 16, p1-13. 13p. |
| Databáze: | Academic Search Ultimate |
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