Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate.
Autor: | Narang, Kapil1,2 (AUTHOR) kapilnarang.sspl@gov.in, Bag, Rajesh K.1 (AUTHOR), Pandey, Akhilesh1 (AUTHOR), Goyal, Anshu1 (AUTHOR), Singh, Vikash K.1 (AUTHOR), Lohani, Jaya1 (AUTHOR), Yadav, Brajesh S.1 (AUTHOR), Saini, Sachin1 (AUTHOR), Bharti, Preeti1 (AUTHOR), Dalal, Sandeep1 (AUTHOR), Padmavati, M. V. G.1 (AUTHOR), Tyagi, Renu1 (AUTHOR), Singh, Rajendra2 (AUTHOR) |
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Zdroj: | Journal of Applied Physics. 10/14/2023, Vol. 134 Issue 14, p1-12. 12p. |
Databáze: | Academic Search Ultimate |
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