Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation.
| Autor: | Ji, Yihong1 (AUTHOR) yj335@cam.ac.uk, Frentrup, Martin1 (AUTHOR), Zhang, Xiaotian1 (AUTHOR), Pongrácz, Jakub1,2,3 (AUTHOR), Fairclough, Simon M.1 (AUTHOR), Liu, Yingjun4 (AUTHOR), Zhu, Tongtong4 (AUTHOR), Oliver, Rachel A.1,4 (AUTHOR) |
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| Zdroj: | Journal of Applied Physics. 10/14/2023, Vol. 134 Issue 14, p1-10. 10p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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