Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction.

Autor: Yang, Shuli1 (AUTHOR), Kang, Lili1 (AUTHOR) llkang@henu.edu.cn, Zheng, Xiaohong2 (AUTHOR) xhzheng@njfu.edu.cn, Jiang, Peng3 (AUTHOR), Zhao, Gaofeng1 (AUTHOR) gfzhao@henu.edu.cn
Zdroj: Journal of Chemical Physics. 10/7/2023, Vol. 159 Issue 13, p1-7. 7p.
Databáze: Academic Search Ultimate