Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction.
Autor: | Yang, Shuli1 (AUTHOR), Kang, Lili1 (AUTHOR) llkang@henu.edu.cn, Zheng, Xiaohong2 (AUTHOR) xhzheng@njfu.edu.cn, Jiang, Peng3 (AUTHOR), Zhao, Gaofeng1 (AUTHOR) gfzhao@henu.edu.cn |
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Zdroj: | Journal of Chemical Physics. 10/7/2023, Vol. 159 Issue 13, p1-7. 7p. |
Databáze: | Academic Search Ultimate |
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