Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing.
| Autor: | Li, Yunkai1,2 (AUTHOR), Zhao, Siqi1,2 (AUTHOR), Yang, Shangyu1,2 (AUTHOR), Guo, Ning1,2 (AUTHOR), Yuan, Weilong1,3 (AUTHOR), Pei, Yicheng1,3 (AUTHOR), Yan, Guoguo1,4 (AUTHOR), Liu, Xingfang1,2,4 (AUTHOR) liuxf@semi.ac.cn |
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| Zdroj: | Semiconductor Science & Technology. Nov2023, Vol. 38 Issue 11, p1-7. 7p. |
| Databáze: | Academic Search Ultimate |
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