Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage.

Autor: Wang, K.1, Steimer, C.1, Wamwangi, D.1, Ziegler, S.1, Wuttig, M.1 wuttig@physik.rwth-aachen.de
Zdroj: Applied Physics A: Materials Science & Processing. May2005, Vol. 80 Issue 8, p1611-1616. 6p.
Databáze: Academic Search Ultimate