Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes.
| Autor: | Oksanich, A.P.1 oksanich@cat-ua.com, Pritchin, S. E.1, Vasheruk, A. V.1 |
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| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004, Vol. 7 Issue 3, p236-239. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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