Optimization of 14nm Horizontal Double Gate for Optimum Threshold Voltage Using L9 Taguchi Method.
| Autor: | Nizam, N. H. N. M.1, A. H., Afifah Maheran1 afifah@utem.edu.my, Salehuddin, F.1, Kaharudin, K. E.2, Z. A., Noor Faizah3 |
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| Zdroj: | International Journal of Nanoelectronics & Materials. 2022 Special issue, Vol. 15, p255-265. 11p. |
| Databáze: | Academic Search Ultimate |
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