Corrigendum to "Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2" [Mater. Sci. Semicond. Process. 160 (2023) 107401].

Autor: Han, Changhyeon1 (AUTHOR), Kwon, Ki Ryun1 (AUTHOR), Kim, Jeonghan1 (AUTHOR), Yim, Jiyong1 (AUTHOR), Kim, Sangwoo1 (AUTHOR), Park, Eun Chan2 (AUTHOR), You, Ji Won2 (AUTHOR), Jeong, Soi2 (AUTHOR), Choi, Rino1,3 (AUTHOR) rino.choi@inha.ac.kr, Kwon, Daewoong1 (AUTHOR) dw79kwon@hanyang.ac.kr
Zdroj: Materials Science in Semiconductor Processing. Jun2023, Vol. 160, pN.PAG-N.PAG. 1p.
Databáze: Academic Search Ultimate
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