Influence of AlGaN Double Barrier Structure on Crystal Quality and Luminescent Properties of InGaN/GaN MQWs Solar Cell Materials Containing High Indium Components.
| Autor: | SHAN Hengsheng1,2 hsshan@sust.edu.cn, LI Minghui1,3, LI Chengke1,3, LIU Shengwei1,3, MEI Yunjian1,3, SONG Yifan1,3, LI Xiaoya4 |
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| Zdroj: | Journal of Synthetic Crystals. Jan2023, Vol. 52 Issue 1, p83-124. 7p. |
| Databáze: | Academic Search Ultimate |
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