InGaAs/GaAs Quantum Dot Heterostructures for 3–5 μm IR Detectors.
| Autor: | Antonov, A. V.1, Gaponova, D. M.1, Danil'tsev, V. M.1, Drozdov, M. N.1, Moldavskay, L. D.1 lmd@ipm.sci-nnov.ru, Murel', A. V.1, Tulovchikov, V. S.1, Shashkin, V. I.1 |
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| Zdroj: | Semiconductors. Jan2005, Vol. 39 Issue 1, p86-88. 3p. |
| Databáze: | Academic Search Ultimate |
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