FEATURES OF GROWING Si- AND Si1−xGex-SINGLE-CRYSTAL FILMS FROM SOLUTION-MELT BASED ON TIN.

Autor: Razzokov, A. Sh.1 a.razzokov777@gmail.com, Saidov, A. S.2, Girzhon, V. V.3, Smolyakov, O. V.3
Zdroj: Journal of Physical Studies. 2022, Vol. 26 Issue 4, p4601-1-4601-5. 5p.
Databáze: Academic Search Ultimate