Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing.
| Autor: | Fiorenza, P.1 (AUTHOR) patrick.fiorenza@imm.cnr.it, Maiolo, L.2 (AUTHOR), Fortunato, G.2 (AUTHOR), Zielinski, M.3 (AUTHOR), La Via, F.1 (AUTHOR), Giannazzo, F.1 (AUTHOR), Roccaforte, F.1 (AUTHOR) |
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| Zdroj: | Journal of Applied Physics. 12/28/2022, Vol. 132 Issue 24, p1-8. 8p. |
| Databáze: | Academic Search Ultimate |
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