Interfacial modification mechanism of ALD-SiO2/4H-SiC heterojunction by synergistic nitrogen–oxygen-atmosphere RTA.

Autor: Huang, Feiqing1,2 (AUTHOR), Zheng, Li2 (AUTHOR) zhengli@mail.sim.ac.cn, Cheng, Xinhong2 (AUTHOR) xh_cheng@mail.sim.ac.cn, Yan, Limin1 (AUTHOR), Huang, Jianhao2 (AUTHOR), Liu, Zhongyu2 (AUTHOR)
Zdroj: Applied Physics A: Materials Science & Processing. Dec2022, Vol. 128 Issue 12, p1-6. 6p.
Databáze: Academic Search Ultimate
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