Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method.

Autor:	Akazawa, Masamichi1 (AUTHOR) akazawa@rciqe.hokudai.ac.jp, Tamamura, Yuya1 (AUTHOR), Nukariya, Takahide1 (AUTHOR), Kubo, Kouta1 (AUTHOR), Sato, Taketomo1 (AUTHOR), Narita, Tetsuo2 (AUTHOR), Kachi, Tetsu3 (AUTHOR)
Zdroj:	Journal of Applied Physics. 11/21/2022, Vol. 132 Issue 19, p1-10. 10p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu