Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors.

Autor: Yang, Ming1 (AUTHOR), Ji, Qizheng1,2 (AUTHOR) qizhji@163.com, Wang, Yuanyuan1 (AUTHOR), Hu, Xiaofeng2 (AUTHOR), Yuan, Qingyun2 (AUTHOR), Liu, Xiaoning3 (AUTHOR), He, Jihao1 (AUTHOR), Wang, Ruojue1 (AUTHOR), Zhou, Li1 (AUTHOR), Xiao, Jingbo1 (AUTHOR), Mei, Fei1 (AUTHOR), Liu, Xiao1 (AUTHOR), Wang, Zhengyu1 (AUTHOR), Zhang, Chao4 (AUTHOR), Wu, Jiapeng1 (AUTHOR), Wu, Yujing1 (AUTHOR), Liu, Yingqian1 (AUTHOR), Cui, Zhengang1 (AUTHOR)
Zdroj: Applied Physics A: Materials Science & Processing. May2022, Vol. 128 Issue 5, p1-7. 7p. 2 Diagrams, 5 Graphs.
Databáze: Academic Search Ultimate
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