Investigation of the cross-sectional morphology of epitaxial Si nanowires grown by chemical vapor deposition for the fabrication of vertical devices.

Autor: Wang, I-Ta1,2 (AUTHOR), Liu, Ting-Ran1,3 (AUTHOR) R08527A22@ntu.edu.tw, Liu, Yu-Ling3 (AUTHOR), Chen, Cheng-Yu3 (AUTHOR), Chang, Chen3 (AUTHOR), Cheng, Chien-Tai3 (AUTHOR), Wen, Cheng-Yen1,3,4 (AUTHOR)
Zdroj: Materials Science & Engineering: B. Jul2022, Vol. 281, pN.PAG-N.PAG. 1p.
Databáze: Academic Search Ultimate
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