Electrical characterization of AlGaN/GaN/Si high electron mobility transistors.
Autor: | Mosbahi, H.1, Gassoumi, M.2 malek.gassoumi@gmail.com, Guesmi, A.3, Hamadi, N. Ben3, Zaidi, M. A.4 |
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Zdroj: | Journal of Ovonic Research. Mar/Apr2022, Vol. 18 Issue 2, p159-165. 7p. |
Databáze: | Academic Search Ultimate |
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