Electrical characterization of AlGaN/GaN/Si high electron mobility transistors.

Autor: Mosbahi, H.1, Gassoumi, M.2 malek.gassoumi@gmail.com, Guesmi, A.3, Hamadi, N. Ben3, Zaidi, M. A.4
Zdroj: Journal of Ovonic Research. Mar/Apr2022, Vol. 18 Issue 2, p159-165. 7p.
Databáze: Academic Search Ultimate