Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP.

Autor:	Ben Arbia, Marwa1 (AUTHOR) benarbiamarwa94@gmail.com, Smiri, Badreddine1,2 (AUTHOR), Demir, Ilkay3 (AUTHOR), Saidi, Faouzi1,4 (AUTHOR), Altuntas, Ismail3 (AUTHOR), Hassen, Fredj1 (AUTHOR), Maaref, Hassen1 (AUTHOR)
Zdroj:	Materials Science in Semiconductor Processing. Mar2022, Vol. 140, pN.PAG-N.PAG. 1p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect