Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes.
| Autor: | Shashikala, B. N.1 shashikala.bn@gmail.com, Nagabhushana, B. S.2 |
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| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2021, Vol. 24 Issue 4, p399-406. 8p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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