Impact of technology scaling on the 1/ƒ noise of thin and thick gate oxide deep submicron NMOS transistors.
Autor: | Chew, K. W.1, Yeo, K. S.2, Chu, S.-F.1 |
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Zdroj: | IEE Proceedings -- Circuits, Devices & Systems. Oct2004, Vol. 151 Issue 5, p415-421. 7p. |
Databáze: | Academic Search Ultimate |
Externí odkaz: |