Impact of technology scaling on the 1/ƒ noise of thin and thick gate oxide deep submicron NMOS transistors.

Autor: Chew, K. W.1, Yeo, K. S.2, Chu, S.-F.1
Zdroj: IEE Proceedings -- Circuits, Devices & Systems. Oct2004, Vol. 151 Issue 5, p415-421. 7p.
Databáze: Academic Search Ultimate