In Situ Implanting of Single Tungsten Sites into Defective UiO‐66(Zr) by Solvent‐Free Route for Efficient Oxidative Desulfurization at Room Temperature.
| Autor: | Ye, Gan1,2 (AUTHOR), Wang, Hanlu3 (AUTHOR), Chen, Wenxing4 (AUTHOR), Chu, Hongqi5 (AUTHOR), Wei, Jinshan1,2 (AUTHOR), Wang, Dagang1 (AUTHOR), Wang, Jin1 (AUTHOR) wangjin19@szu.edu.cn, Li, Yadong6 (AUTHOR) |
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| Zdroj: | Angewandte Chemie. 9/6/2021, Vol. 133 Issue 37, p20481-20487. 7p. |
| Databáze: | Academic Search Ultimate |
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