Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures.

Autor: Fariza, Aqdas1,2,3 (AUTHOR), Ji, Xiaoli1,2,3 (AUTHOR), Gao, Yaqi1,2,3 (AUTHOR), Ran, Junxue1,2,3 (AUTHOR), Wang, Junxi1,2,3 (AUTHOR), Wei, Tongbo1,2,3 (AUTHOR)
Zdroj: Journal of Applied Physics. 4/28/2021, Vol. 129 Issue 16, p1-8. 8p.
Databáze: Academic Search Ultimate