A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process.
Autor: | Cao, Cheng1,2,3 (AUTHOR), Liu, Jiangfan1,2,3 (AUTHOR), Li, Yubing1,2,3 (AUTHOR), Tan, Tao1,2,3 (AUTHOR), Huang, Zemeng1,2,3 (AUTHOR), Zhang, Ping1,2,3 (AUTHOR), Li, Qingwen1,2,3 (AUTHOR), Qi, Zihang1,2,3 (AUTHOR), Li, Xiuping1,2,3 (AUTHOR) xpli@bupt.edu.cn |
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Zdroj: | International Journal of RF & Microwave Computer-Aided Engineering. Jun2021, Vol. 31 Issue 6, p1-12. 12p. |
Databáze: | Academic Search Ultimate |
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