High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage.

Autor: Zhang, X.-M.1,2 (AUTHOR), Yan, C.-L.1 (AUTHOR) changling_yan@126.com, Yu, G.-H.2 (AUTHOR), Zeng, C.-H.1,2 (AUTHOR), Sun, T.-Y.2 (AUTHOR), Xing, Z.2 (AUTHOR), Wang, Y.-Q.2 (AUTHOR), Yang, J.-H.1 (AUTHOR), Zhang, B.-S.2 (AUTHOR)
Zdroj: Semiconductors. Mar2021, Vol. 55 Issue 3, p387-393. 7p.
Databáze: Academic Search Ultimate
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