MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
| Autor: | Lundin, V. V.1 lundin.vpegroup@mail.ioffe.ru, Zavarin, E. E.1, Besulkin, A. I.1, Gladyshev, A. G.1, Sakharov, A. V.1, Kokorev, M. F.2, Shmidt, N. M.1, Tsatsul'nikov, A. F.1, Ledentsov, N. N.1, Alferov, Zh. I.1, Kakanakov, R.3 |
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| Zdroj: | Semiconductors. Nov2004, Vol. 38 Issue 11, p1323-1325. 3p. |
| Databáze: | Academic Search Ultimate |
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