Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy.

Autor: Gridchin, V. O.1 (AUTHOR) gridchinvo@yandex.ru, Kotlyar, K. P.1 (AUTHOR), Reznik, R. R.2 (AUTHOR), Dvoretskaya, L. N.1 (AUTHOR), Parfen'eva, A. V.3 (AUTHOR), Mukhin, I. S.1,2 (AUTHOR), Cirlin, G. E.1,2,3,4,5 (AUTHOR)
Zdroj: Technical Physics Letters. 2020, Vol. 46 Issue 11, p1080-1083. 4p.
Databáze: Academic Search Ultimate
Nepřihlášeným uživatelům se plný text nezobrazuje