Microwave Field-Effect Transistors Based on Group-III Nitrides.
| Autor: | Aleksandrov, S. B.1, Baranov, D. A.1, Kaidash, A. P.1, Krasovitskii, D. M.1, Pavlenko, M. V.1, Petrov, S. I.1 support@semiteq.ru, Pogorel'skii, Yu. V.1, Sokolov, I. A.1, Stepanov, M. V.1, Chalyi, V. P.1, Gladysheva, N. B.2, Dorofeev, A. A.2, Matveev, Yu. A.2, Chernyavskii, A. A.2 |
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| Zdroj: | Semiconductors. Oct2004, Vol. 38 Issue 10, p1235-1239. 5p. |
| Databáze: | Academic Search Ultimate |
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