Intermediate-band-assisted near-field thermophotovoltaic devices with InAs, GaSb, and Si based absorbers.
Autor: | Shen, Wei1 (AUTHOR), Xiao, Juying1 (AUTHOR), Wang, Yuan2 (AUTHOR), Su, Shanhe1 (AUTHOR) sushanhe@xmu.edu.cn, Guo, Juncheng3 (AUTHOR), Chen, Jincan1 (AUTHOR) |
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Zdroj: | Journal of Applied Physics. 7/21/2020, Vol. 128 Issue 3, p1-7. 7p. 1 Diagram, 5 Graphs. |
Databáze: | Academic Search Ultimate |
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