Intermediate-band-assisted near-field thermophotovoltaic devices with InAs, GaSb, and Si based absorbers.

Autor: Shen, Wei1 (AUTHOR), Xiao, Juying1 (AUTHOR), Wang, Yuan2 (AUTHOR), Su, Shanhe1 (AUTHOR) sushanhe@xmu.edu.cn, Guo, Juncheng3 (AUTHOR), Chen, Jincan1 (AUTHOR)
Zdroj: Journal of Applied Physics. 7/21/2020, Vol. 128 Issue 3, p1-7. 7p. 1 Diagram, 5 Graphs.
Databáze: Academic Search Ultimate