Multiple-bit storage properties of porphyrin monolayers on SiO2.

Autor: Qiliang Li1, Surthi, Shyam1, Mathur, Guru1, Gowda, Srivardhan1, Qian Zhao1, Sorenson, Thomas A.2, Tenent, Robert C.2, Muthukumaran, Kannan3, Lindsey, Jonathan S.3, Misra, Veena4 vmisra@cos.nesu.edu
Zdroj: Applied Physics Letters. 9/6/2004, Vol. 85 Issue 10, p1829-1831. 3p. 1 Diagram, 3 Graphs.
Databáze: Academic Search Ultimate