Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates.

Autor:	Andreev, A. A.1 (AUTHOR) andreev_aa@nrcki.ru, Grishchenko, Yu. V.1 (AUTHOR), Ezubchenko, I. S.1 (AUTHOR), Chernykh, M. Ya.1 (AUTHOR), Kolobkova, E. M.1 (AUTHOR), Maiboroda, I. O.1 (AUTHOR), Chernykh, I. A.1 (AUTHOR), Zanaveskin, M. L.1 (AUTHOR)
Zdroj:	Technical Physics Letters. Feb2019, Vol. 45 Issue 2, p173-175. 3p.
Databáze:	Academic Search Ultimate
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