Stacked gate insulator of photooxide and PECVD film from SiH4 and N2O for low-temperature poly-Si thin-film transistor.
| Autor: | Nakata, Yukihiko1, Okamoto, Tetsuya1, Itoga, Takashi1, Hamada, Toshimasa1, Ishii, Yutaka1 |
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| Zdroj: | Electronics & Communications in Japan, Part 2: Electronics. Nov2003, Vol. 86 Issue 11, p21-28. 8p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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