Application of High-Resistivity Silicon Substrate for Fabrication of MOSFET-Based THz Radiation Detectors.

Autor: KUCHARSKI, K.1 kucharsk@ite.waw.pl, TOMASZEWSKI, D.1, GŁUSZKO, G.1, KOPYT, P.2, MARCZEWSKI, J.1, ZAGRAJEK, P.3, PANAS, A.1
Zdroj: Acta Physica Polonica: A. Oct2018, Vol. 134 Issue 4, p966-968. 3p.
Databáze: Academic Search Ultimate