Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC.

Autor: Shanina, B. D.1 shanina_bela@rambler.ru, Bratus', V. Ya.1
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 3, p225-230. 6p.
Databáze: Academic Search Ultimate