Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma.
| Autor: | Okhapkin, A. I.1 andy-ohapkin@yandex.ru, Yunin, P. A.1, Drozdov, M. N.1, Kraev, S. A.1, Skorokhodov, E. V.1, Shashkin, V. I.1 |
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| Zdroj: | Semiconductors. Nov2018, Vol. 52 Issue 11, p1473-1476. 4p. |
| Databáze: | Academic Search Ultimate |
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