Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
| Autor: | Yunin, P. A.1,2 yunin@ipmras.ru, Drozdov, Yu. N.1, Khrykin, O. I.1, Grigoryev, V. A.2 |
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| Zdroj: | Semiconductors. Nov2018, Vol. 52 Issue 11, p1412-1415. 4p. |
| Databáze: | Academic Search Ultimate |
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