Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)-Vacuum Interface.

Autor: Bakin, V. V.1, Kosolobov, S. N.1, Rozhkov, S. A.1,2, Scheibler, H. E.1,2, Terekhov, A. S.1 terek@isp.nsc.ru
Zdroj: JETP Letters. Aug2018, Vol. 108 Issue 3, p180-184. 5p.
Databáze: Academic Search Ultimate