Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
| Autor: | Aleshkin, V. Ya.1,2, Baidus, N. V.2, Vikhrova, O. V.2, Dubinov, A. A.1,2 sanya@ipmras.ru, Zvonkov, B. N.2, Krasilnik, Z. F.1,2, Kudryavtsev, K. E.1,2, Nekorkin, S. M.2, Novikov, A. V.1,2, Rykov, A. V.2, Samartsev, I. V.2, Yurasov, D. V.1,2 |
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| Zdroj: | Technical Physics Letters. Aug2018, Vol. 44 Issue 8, p735-738. 4p. |
| Databáze: | Academic Search Ultimate |
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